All2GaN
Projects
All2GaN - Gallium nitride chips boost energy efficiency and reduce CO2 emissions
Project duration: May 1st 2023 thru April 30th2026
Funded by EU
Support code: 101111890
Funded by BMBF
Support code: 16MEE0288
The “ALL2GaN” (Affordable smart GaN IC solutions for greener applications) project is about easily integrated energy-saving chips made of gallium nitride (GaN). Compared to common semiconductor solution, they have the potential to improve energy efficiency by 30 percent in a wide range of applications and thus save an extrapolated 218 million tons of CO2 worldwide.
New generation of energy-saving chips reduces emissions
The research project “ALL2GaN”, led by Infineon Austria, brings together 45 partners from twelve countries with a total budget of around 60 million euros. The aim is to fully exploit the energy-saving potential of highly efficient power semiconductors made of the semiconductor material gallium nitride (GaN), to integrate them easily and quickly into many applications, and thus to reduce emissions.
GaN chips: Energy efficiency reduces CO2 footprint
GaN chips: Energy efficiency reduces CO2 footprint Generating, controlling and using energy efficiently is a decisive lever for CO2 reduction. The less energy that is wasted, the lower the emissions. Intelligent technologies and new semiconductor materials such as gallium nitride (GaN) play a key role here. They deliver more power in a small space, convert energy highly efficiently and thus minimize the CO2 footprint in digital devices.
IMS CHIPS contributes GaN process know-how to the project
IMS CHIPS is involved in the project with the further development of existing approaches for the advantageous processing of GaN substrates and in particular the patterning of GaN on wafers made of silicon carbide/(SiC) and on so-called “engineered” substrates up to a size of 200 mm.
www.all2gan.eu